Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same

ABSTRACT

An image sensor includes a photo sensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photo sensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.

BACKGROUND

1. Technical Field

This disclosure is related to image sensors and, in particular, to imagesensors in which ghost images caused by reflection of infrared (IR)radiation are substantially reduced or eliminated.

2. Discussion of Related Art

Image sensors with both visible and near infrared (NIR) capability havebeen used in automotive sensors in such applications as driverassistance applications and safety applications, such as pedestrian,obstruction and sign detection, rear-view or back-up cameraapplications, etc. Such sensors can operate in a dual mode, which allowsthem to function both in daylight (in the visible light spectrumapplication) and night vision (in the IR application). This newlyincorporated IR capability is made possible by the development andimplementation of a number of process-level enhancements that expand thesenors' spectral light sensitivity to about 1050 nm, which is well intothe NIR range of 750-1400 nm.

One drawback of this dual-mode capability is that the new sensitivity inthe NIR range has resulted in IR ghost images being created. In certainsituations, IR radiation can be reflected, such as, for example, by aredistribution layer (RDL) of the image sensor, and then detected by theimage sensor. This introduces noise into the image sensor and,therefore, reduces the sensitivity of the image sensor.

SUMMARY

According to a first aspect, an image sensor is provided. The imagesensor includes a photosensing element for receiving infrared (IR)radiation and detecting the IR radiation and generating an electricalsignal indicative of the IR radiation. A redistribution layer (RDL) isdisposed under the photo sensing element, the RDL comprising a patternof conductors for receiving the electrical signal. An IR reflectionlayer is disposed between the photo sensing element and the RDL, said IRreflection layer reflecting a reflected portion of the IR radiation backto the photo sensing element such that the reflected portion of the IRradiation does not impinge upon the RDL.

According to another aspect, an image sensor is provided. The imagesensor includes a photosensing element for receiving infrared (IR)radiation and detecting the IR radiation and generating an electricalsignal indicative of the IR radiation. A redistribution layer (RDL) isdisposed under the photo sensing element, the RDL comprising a patternof conductors for receiving the electrical signal. An IR absorptionlayer is disposed between the photo sensing element and the RDL, IRabsorption layer absorbing the IR radiation such that a substantialportion of the IR radiation does not impinge upon the RDL.

According to another aspect, an image sensor is provided. The imagesensor includes a photosensing element for receiving infrared (IR)radiation and detecting the IR radiation and generating an electricalsignal indicative of the IR radiation. A redistribution layer (RDL) isdisposed under the photo sensing element, the RDL comprising a patternof conductors for receiving the electrical signal. An isolation layer isdisposed between the photosensing element and the RDL, the isolationlayer being adapted to absorb the IR radiation such that a substantialportion of the IR radiation does not impinge upon the RDL.

According to another aspect, an image sensor is provided. The imagesensor includes a photosensing element for receiving infrared (IR)radiation and detecting the IR radiation and generating an electricalsignal indicative of the IR radiation. A redistribution layer (RDL) isdisposed under the photo sensing element, the RDL comprising a patternof conductors for receiving the electrical signal. An IR barrier layeris disposed between the photo sensing element and the RDL, said IRbarrier layer preventing the IR radiation from impinging upon the RDL.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages will be apparent fromthe more particular description of preferred embodiments, as illustratedin the accompanying drawings, in which like reference characters referto the same parts throughout the different views. The drawings are notnecessarily to scale, emphasis instead being placed upon illustratingthe principles of the preferred embodiments. In the drawings, the sizesand thicknesses of layers, regions and features may be exaggerated forclarity.

FIG. 1 includes a schematic cross-sectional illustration of an imagesensor, illustrating reflection of IR radiation, which can result ingeneration of an undesirable ghost image.

FIG. 2A includes a clear image, i.e., a control image, in which no ghostimage has been formed.

FIG. 2B includes an image in which a ghost image is formed.

FIG. 3 includes a schematic cross-sectional illustration of an imagesensor which can generate a ghost image of the RDL of the image sensor.

FIG. 4 includes a schematic cross-sectional illustration of anotherimage sensor which can generate a ghost image of the RDL of the imagesensor.

FIG. 5 includes a schematic cross-sectional diagram of an image sensorincluding an IR reflection layer, according to some exemplaryembodiments.

FIG. 6 includes a schematic cross-sectional diagram of another imagesensor including an IR reflection layer, according to some exemplaryembodiments.

FIG. 7 contains a table which provides examples related to the exemplaryembodiments described herein in which multiple transparent sub-layers ofdielectric materials achieve constructive reflection.

FIG. 8 includes a graph which illustrates a profile of reflectionpercentage as a function of wavelength for the multi-layer dielectricmaterials structure defined in the table of FIG. 7.

FIG. 9 includes a graph which illustrates a profile of reflectionpercentage as a function of wavelength for a single layer of aluminumhaving a thickness of 125.96 nm.

FIG. 10 includes a graph which illustrates a profile of reflectionpercentage as a function of wavelength for a single layer of chromiumhaving a thickness of 64.72 nm.

FIG. 11 includes a schematic cross-sectional diagram of an image sensordevice, including an IR absorption layers, according to some exemplaryembodiments.

FIG. 12 includes a schematic cross-sectional diagram of another imagesensor device, including an IR absorption layers, according to someexemplary embodiments.

FIG. 13 includes a graph which illustrates absorption (%) vs. wavelengthfor a metal-dielectric-metal sandwich absorption layer having achromium-SiO₂-chromium sandwich structure, according to some exemplaryembodiments.

FIG. 14 includes a graph which illustrates absorption (%) vs. wavelengthfor a metal-dielectric-metal sandwich absorption layer having anickel-SiO₂-nickel sandwich structure, according to some exemplaryembodiments.

FIG. 15 includes a graph which illustrates a profile of absorptionpercentage as a function of wavelength for a single layer of chromiumhaving a thickness of 16.85 nm.

FIG. 16 includes a graph which illustrates a profile of absorptionpercentage as a function of wavelength for a single layer of nickelhaving a thickness of 11.85 nm.

FIG. 17 includes a schematic cross-sectional diagram of an image sensorhaving a multi-functional isolation layer, which significantly absorbsIR light, according to some exemplary embodiments.

FIGS. 18A-18C are images which illustrate the results of the approachesof the exemplary embodiments used in reducing or eliminating ghostimaging, specifically, ghost imaging of the RDL of an image sensor.Specifically, FIG. 18A is an image produced without any IR barrierlayer. FIG. 18B is an image illustrating the effects of adding an IRreflection barrier layer between the RDL and the sensing layer,according to some exemplary embodiments. FIG. 18C is an imageillustrating the effects of adding an IR absorption barrier layerbetween the RDL and the sensing layer, according to some exemplaryembodiments.

DETAILED DESCRIPTION

Referring to FIG. 1, an image sensor 10 can be formed of multiplelayers, which can include a photosensitive sensing layer 12, which caninclude photodetectors and which detects both visible and IR light andgenerates electrical signals indicative of attributes, e.g., intensity,of the detected light, and outputs the electrical signals. Light entersthe sensing layer 12 through a window 26, which is defined by a layer ofpixel lenses 16 and a layer of color filters 14, which are formed on thesensing layer 12. Color filters 14 may include RGB (red, green and blue)filters arranged in various patters, such as the Bayer Patter as knownin the art. They may additionally include panchromatic filters, i.e.,clear filters.

An isolation layer 18 is formed beneath sensing layer 12. Aredistribution layer (RDL) 20, which includes a pattern of conductivetraces for conducting electrical signals, e.g., the electrical signalsgenerated by sensing layer 12, as required, is formed under isolationlayer 18. An isolating protective passivation layer 22 can be formedbeneath and within RDL 20 to protect the conductive layer traces fromthe external environment, such that undesirable open or short circuitsin RDL 20, which could be caused by exposure to the external environmentand which could render image sensor 10 inoperable, are prevented. Apattern of conductive input/output (I/O) pads 24, illustrated in FIG. 1in the form of conductive solder bumps, is formed within passivationlayer 22 in electrical contact with RDL 20 as appropriate to makeelectrical contact between the external environment and the pattern ofconductive traces in RDL 20. RDL 20 is a patterned metal layer of wiringwhich enables electrical bonding from various locations internal toimage sensor 10 out to external I/O pads 24. RDL 20 is important to theelectrical linking of internal components of image sensor 10 to externalcomponents.

As illustrated in FIG. 1, light 28, which includes IR light, and,specifically, NIR light, enters sensing layer 12 of image sensor 10through lenses 16 and filters 14 in window 26, where it is sensed by thephotodetectors in sensing layer 12. Because IR light has relatively longwavelengths, it may travel deeper through sensing layer 12. As a result,the IR light may reach RDL 20 and be reflected back into sensing layer12, as illustrated in FIG. 1 by reflected portion 30 of IR light 28.Reflected portion 30 of IR light 28 is then detected by sensing layer12, which then produces a ghost image of RDL 20. Additionally, IR lightmay also enter image sensor 10 through the back side, can penetratepassivation layer 22, RDL 20 and isolation layer 18 into sensing layer12, and, therefore, can contribute further to generation of a ghostimage.

FIGS. 2A and 2B include images illustrating the ghost image that can beformed as described above in connection with FIG. 1. FIG. 2A includes aclear image, i.e., a control image, in which no ghost image has beenformed. FIG. 2B includes an image in which a ghost image is formed. Asclearly seen in FIG. 2B, an image of RDL 20, showing its conductivetraces and pads, is generated within the clear image of the region beingviewed. That is, reflected portion 30 of IR light 28 carries theinformation regarding the shape of RDL 20 and adds that information tothe information used in generating the image of FIG. 2B. As noted above,this result is highly undesirable since it lowers the sensitivity ofimage sensor 10 and degrades the quality of images generated by imagesensor 10. It is noted that the images in FIGS. 2A and 2B were generatedby an image sensor 10 operating at a wavelength range of λ=900˜1200 nm,as an exemplary illustration. It is noted that other wavelength rangesare possible and are within the scope of the present disclosure.

Possible approaches to reducing the ghost image are illustrated in FIGS.3 and 4, which are schematic cross-sectional illustrations of imagesensors 110 and 120, respectively. Various elements of image sensors 110and 120 are the same as corresponding elements of image sensor 10described above in detail in connection with FIG. 1. These like elementsare identified by like reference numerals. Detailed description of theselike elements will not be repeated.

Referring to FIG. 3, image sensors 110 and 120 include a layer orcoating of black photoresist (BPR) 40 and 42, respectively, applied totheir top side and/or bottom side, respectively. Specifically, imagesensor 110 of FIG. 3 includes a layer 40 of BPR applied to its top side,and image sensor 120 of FIG. 4 includes a layer 42 of BPR applied to itsbottom side. The layers 40 and 42 of BPR are opaque to IR radiation and,therefore, any IR radiation impinging on the BPR does not penetrate.However, referring to FIG. 3, even though the BPR 40 is applied to thetop side of image sensor 110 and stops IR light 31 from penetrating downto reach RDL 20, the window 26 which exposes the active area of thedevice must remain unblocked to allow the radiation/light 28 topenetrate to sensing layer 12 to be detected. As a result, IR lightcannot be completely prevented from reflecting from the RDL 20 toproduce the reflected portion 30 of the radiation/light, which resultsin generation of the ghost image.

Referring to FIG. 4, BPR layer 42 is formed on the back or bottom sideof image sensor 120. It should be noted that it is desirable that theBPR 42 not cover the solder balls or pads 24 on the back side of thedevice, such that electrical connection to the device is not hindered byBPR 42. As illustrated in FIG. 4, the same situation regarding thereflected portion 30 of radiation/light exists, that is, portion 30 isreflected from RDL 20 back into sensing layer 12, such that the ghostimage is generated. However, BPR layer 42 on the back side of imagesensor 120 prevents IR light 33 from penetrating into the device. As aresult, IR light 33 does not contribute to the ghost image.

According to exemplary embodiments, to prevent ghost images caused byreflection of IR light from the RDL, an IR barrier layer is disposedbetween the sensing layer and the RDL. According to some exemplaryembodiments, the IR barrier layer is an IR reflection layer, and in someexemplary embodiments, the IR barrier layer is an IR absorption layer.FIGS. 5 and 6 include schematic cross-sectional diagrams of image sensordevices 200 and 300, respectively, including IR reflection layers,according to some exemplary embodiments. Referring to FIGS. 5 and 6,various elements of image sensors 200 and 300 are the same ascorresponding elements of image sensors 10, 110, and 120 described abovein detail in connection with FIGS. 1, 3 and 4, respectively. These likeelements are identified by like reference numerals. Detailed descriptionof these like elements will not be repeated.

Referring to FIG. 5, an image sensor 200 includes an additional IRreflection layer 250 over isolation layer 18. IR reflection layer 250reflects IR light 28 which penetrates through sensing layer 212 togenerate a reflected portion 230 of IR light. Reflected portion 230 ofthe IR light passes back through sensing layer 212 where it is detectedand, as a result, contributes to the image generated by image sensor200. However, because the IR light 28 is reflected back by IR reflectionlayer 250 before it reaches RDL 20, a ghost image of RDL 20 includingconductive traces, pads, etc., as illustrated in FIG. 2B, is notgenerated and, therefore, does not affect the image generated by imagesensor 200. That is, even though reflected portion 230 of the IR lightis added to the image generated by image sensor 200 and, therefore, doesintroduce some noise in the form of additional IR light detection, aghost image of RDL 20 is not formed and does not become part of thefinal image generated by image sensor 200.

As shown in FIG. 5, image sensor 200 can also include BPR layer or film42 applied to its back surface. BPR layer or film 42 blocks, i.e.,absorbs, IR light 33 incident on the back side of image sensor 200, thuspreventing IR light 33 from introducing noise and, therefore, degradingthe image generated by image sensor 200.

Referring to FIG. 6, another image sensor 300 according to exemplaryembodiments is illustrated. Image sensor 300 is the same as image sensor200 described above in connection with FIG. 5, with the exception thatimage sensor 300 includes a BPR layer or film 240 applied to the frontor top side of image sensor 300, instead of the back or bottom side. Inthis embodiment, IR light 31 incident on the top or front surface ofimage sensor 300 in the non-active region of the device is blocked,i.e., absorbed, such that it does not enter sensing layer 212 and,therefore, does not introduce noise or degrade the image generated byimage sensor 300.

In image sensor 300 of FIG. 6, BPR layer or film 240 must remain open atwindow 26 such that IR light 28 can enter sensing layer 212 and bedetected. Some of the IR light 28 completely penetrates sensing layer212 and is reflected back into sensing layer 212 by IR reflection layer250, such that it is detected by sensing layer 212 and is, therefore,included in the image generated by image sensor 300, thus introducingsome noise and image degradation. However, once again, because the IRlight 28 does not reach RDL 20, no ghost image of RDL 20 is formed, and,therefore, substantial noise and image degradation is eliminated.

It will be noted that the embodiments of image sensors 200 and 300illustrated in FIGS. 5 and 6 include BPR layers or films formed on theirback/bottom and front/top sides, respectively. It will be understoodthat, within the scope of this disclosure, either of image sensors 200and 300 can include a BPR layer or film on either its back/bottom side,its front/top side, both its back/bottom side and its front/top side, orneither its back/bottom nor its front/top side.

According to exemplary embodiments, IR reflection layer 250 can be asingle layer or can be formed of multiple layers or sub-layers. Thesevarious configurations of IR reflection layer 250 are described below indetail. In FIGS. 5 and 6, IR reflection layer 250 is illustrated byincluding dashed horizontal lines to illustrate the optionalmulti-sub-layer configurations. It will be understood that three layersare illustrated by the dashed lines for the sake of providing a clearand complete description and are exemplary only. Any number ofsub-layers can be used within the scope of this disclosure.

As noted above, according to exemplary embodiments, IR reflection layer250 can take on any of several possible configurations. For example, insome exemplary embodiments, reflection layer 250 uses constructivereflection to achieve almost total reflection using multiple transparentsub-layers. In some exemplary embodiments, a single layer of reflectivemetal is used for reflection layer 250. The single reflective metallayer does not generally achieve as high a level of reflection as theconfiguration having multiple transparent sub-layers; however, thesingle reflective metal layer is generally thinner than the multipletransparent sub-layers.

In the embodiments having multiple transparent sub-layers of dielectricmaterials, constructive reflection refers to using multiple layers toachieve a high degree of reflection. There are generally two factorsthat contribute to an increased level of reflection.

First, at a simple interface between two dielectric materials, theamplitude of reflected light is a function of the ratio of therefractive indices of the two materials, the polarization of theincident light, and the angle of incidence. For example, at normalincidence, i.e., incident light is perpendicular to the interface, therelative amplitude of the reflected light, as a proportion of theincident light, is given by (1−p)/(1+p), where p=n₁/n₂, and intensity isthe square of this expression, i.e., ((n₂−n₁)/(n₂+n₁))², wherein n₁ andn₂ are the refractive indices of the first and second dielectricmaterials, respectively. Thus, the greater the difference betweenrefractive indices of the materials, the greater the reflection. Forexample, for an air/glass interface, n₁=1 (air), and n₂=1.5 (glass), sothe intensity of the reflected light is 4% of the incident light.Multiple sub-layers of dielectric material will introduce multipleinterfaces. As a result, the amount of reflection will increase withadditional layers.

Second, the thicknesses of the layers may be chosen so as to reinforcereflected light through constructive interference. This is accomplishedthrough use of a type of interference coating that strengthensreflection. Reflection interference is the opposite of the more commonlyknown anti-reflection interference, where the thicknesses of the layersare chosen so that the reflected light will destructively interfere andcancel each other since they are exactly out of phase. In reflectioninterference, the thicknesses of the layers are chosen so that thereflected light will constructively interfere and reinforce each othersince they are in phase.

FIG. 7 contains a table which provides examples related to the exemplaryembodiments described above in which multiple transparent sub-layers ofdielectric materials achieve constructive reflection. Referring to thetable of FIG. 7, two sets of parameters are manipulated to maximize IRreflection. For the first factor of utilizing multiple interfaces ofdielectric materials with proper refractive indices, SiO₂ (n=1.455) andTiO₂ (n=2.37) are arranged in an alternating fashion to form an IRreflection layer with 19 sub-layers. For the second factor of choosingspecific thicknesses to reinforce reflection interference, thicknessesof each layer in nanometers (nm) are included in the table of FIG. 7.Referring to the specific exemplary embodiment defined in the table ofFIG. 7, as a result of the selections of materials and the quantity andthicknesses of layers, for IR light with a wavelength between 900 and1200 nm, a total reflection of 98% is achieved with this multi-layeredstructure. It will be understood that different reflections can berealized by selections of different materials and quantities andthicknesses of layers.

FIG. 8 includes a graph which illustrates a profile of reflectionpercentage as a function of wavelength for the multi-layer dielectricmaterials structure defined in the table of FIG. 7. As shown in thegraph of FIG. 8, the reflection achieved is almost 100% throughout theentire 900-1200 nm spectral range.

As noted above, in other exemplary embodiments, a single layer ofreflective metal is used for the IR reflection layer. When a singlelayer of metal material is used, the IR reflection layer may be madeconsiderably thinner than the multi-layer dielectric materialsstructure. However, the reflection performance is not as good as that ofthe multi-layer dielectric materials approach. Furthermore, increasingthe thickness of the metal layer will not increase reflection beyond acertain point.

In some particular exemplary embodiments, when a single layer of, forexample, aluminum, is used, reflection of IR (wavelength in the range of900-1200 nm) will be capped at 89% when the thickness of the layer is126 nm. A thickness of more than 126 nm will not increase reflectionfurther. If the thickness of the layer is less than 126 nm, reflectionwill decrease. FIG. 9 includes a graph which illustrates a profile ofreflection percentage as a function of wavelength for a single layer ofaluminum having a thickness of 125.96 nm. Referring to FIG. 9, it isreadily observed that the reflection performance is not as good as thatof the multi-layered dielectric materials structure, although thealuminum IR reflection layer is considerably thinner.

As another example, when a single layer of chromium is used, IRreflection will be capped at 60% at a thickness of 65 nm. Thickness ofmore than 65 nm will not increase reflection. If the thickness is lessthan 65 nm, the reflection will decrease. FIG. 10 includes a graph whichillustrates a profile of reflection percentage as a function ofwavelength for a single layer of chromium having a thickness of 64.72nm. Referring to FIG. 10, it is readily apparent that reflectionperformance is not as good as the multi-layered dielectric materialsstructure or the single layer of aluminum, although the chromium IRreflection layer is the thinnest of these three examples.

Other metals besides aluminum and chromium can be used in thesingle-metal-layer configuration. For example, other metals that can beused include, but are not limited to gold, silver, copper, etc.

In accordance with exemplary embodiments, a thinner IR reflection layeris generally desirable because it results in a thinner image sensor.This results in a trade-off between achieving a high level of IRreflection and the extent to which the thickness of the image sensor canbe reduced.

As described above, according to exemplary embodiments, to prevent ghostimages caused by reflection of IR light from the RDL, an IR barrier isdisposed between the sensing layer and the RDL. According to someexemplary embodiments described above, the IR barrier layer is an IRreflection layer. In some exemplary embodiments, the IR barrier layer isan IR absorption layer.

FIGS. 11 and 12 include schematic cross-sectional diagrams of imagesensor devices 400 and 500, respectively, including IR absorptionlayers, according to some exemplary embodiments. Referring to FIGS. 11and 12, various elements of image sensors 400 and 500 are the same ascorresponding elements of image sensors 10, 110, 120, 200 and 300described above in detail in connection with FIGS. 1, 3, 4, 5 and 6,respectively. These like elements are identified by like referencenumerals. Detailed description of these like elements will not berepeated.

Referring to FIG. 11, an image sensor 400 includes an additional IRabsorption layer 450 over isolation layer 18. IR absorption layer 450absorbs IR light 28 which penetrates through sensing layer 412, suchthat no IR light passes back through sensing layer 412. As a result, noghost image is produced.

As shown in FIG. 11, image sensor 400 can also include BPR layer or film42 applied to its back surface. BPR layer or film 42 blocks, i.e.,absorbs, IR light 33 incident on the back side of image sensor 400, thuspreventing IR light 33 from introducing noise and, therefore, degradingthe image generated by image sensor 400.

Referring to FIG. 12, another image sensor 500 according to exemplaryembodiments is illustrated. Image sensor 500 is the same as image sensor400 described above in connection with FIG. 11, with the exception thatimage sensor 500 includes a BPR layer or film 540 applied to the frontor top side of image sensor 500, instead of the back or bottom side. Inthis embodiment, IR light 31 incident on the top or front surface ofimage sensor 500 in the non-active region of the device is blocked,i.e., absorbed, such that it does not enter sensing layer 412 and,therefore, does not introduce noise or degrade the image generated byimage sensor 500. In image sensor 500 of FIG. 12, BPR layer or film 540must remain open at window 26 such that IR light 28 can enter sensinglayer 412 and be detected. However, IR absorption layer 450 absorbs IRlight 28 which penetrates through sensing layer 412, such that no IRlight passes back through sensing layer 412. As a result, no ghost imageis produced.

It will be noted that the embodiments of image sensors 400 and 500illustrated in FIGS. 11 and 12 include BPR layers or films formed ontheir back/bottom and front/top sides, respectively. It will beunderstood that, within the scope of this disclosure, either of imagesensors 400 and 500 can include a BPR layer or film on either itsback/bottom side, its front/top side, both its back/bottom side and itsfront/top side, or neither its back/bottom nor its front/top side.

According to exemplary embodiments, IR absorption layer 450 can be asingle layer or can be formed of multiple layers or sub-layers. Thesevarious configurations of IR absorption layer 450 are described below indetail. In FIGS. 11 and 12, IR absorption layer 450 is illustrated byincluding dashed horizontal lines to illustrate the optionalmulti-sub-layer configurations. It will be understood that three layersare illustrated by the dashed lines for the sake of providing a clearand complete description and are exemplary only. Any number ofsub-layers can be used within the scope of this disclosure.

As noted above, according to exemplary embodiments, IR absorption layer450 can take on any of several possible configurations. For example, insome exemplary embodiments, the absorption layer uses resonance toachieve almost total absorption using a metal-dielectric-metal sandwichstructure. In other exemplary embodiments, the absorption layer uses asingle layer of metal. In these embodiments, the resulting percent ofabsorption is not as good as that of the metal-dielectric-metal sandwichembodiments, although the single metal absorption layer is thinner.

As noted above, in some exemplary embodiments, the IR absorption layerincludes a composite metal-dielectric-metal sandwich type structure. Themetal sub-layer facing the incident IR light can be substantiallythicker than the other metal layer. IR light that reaches this compositestructure resonates back and forth between the two metal layers,resulting in most of its energy being absorbed. Two sets of parametersare selected. The first set of parameters includes the types of metaland dielectric material. The second set of parameters is the thicknessof each sub-layer. When proper parameters are chosen, the IR light willform a standing wave between the two metal layers, resulting insignificant resonance and energy absorption.

FIG. 13 contains a graph which illustrates absorption (%) vs. wavelengthfor a metal-dielectric-metal sandwich absorption layer having achromium-SiO₂-chromium sandwich structure, according to some exemplaryembodiments. FIG. 14 contains a graph which illustrates absorption (%)vs. wavelength for a metal-dielectric-metal sandwich absorption layerhaving a nickel-SiO₂-nickel sandwich structure, according to someexemplary embodiments.

Referring to FIG. 13, the thickness of each sub-layer is shown in thedrawing. As illustrated in the drawing, this absorption layer structuremay absorb more than 99% of IR light throughout the 900-1200 nm spectralrange. Referring to FIG. 14, the thickness of each sub-layer is shown inthe drawing. As illustrated in the drawing, this absorption layerstructure may absorb more than 96% of IR light throughout the 900-1200nm spectral range.

As noted above, in some exemplary embodiments, the IR absorption layerincludes a single layer of metal. In these embodiments, the IRabsorption layer can be made considerably thinner. However, the IRabsorption performance is not as good as the sandwich compositestructure approach described in detail above. Also, increasing thethickness of the metal layer will not increase IR absorption beyond acertain point.

In some particular exemplary embodiments, when a single layer of, forexample, chromium, is used, absorption of IR (wavelength in the range of900-1200 nm) will be capped at 40% when the thickness of the layer is 17nm. A thickness of more than 17 nm will not increase absorption further.In some particular exemplary embodiments, when a single layer of, forexample, nickel, is used, absorption of IR (wavelength in the range of900-1200 nm) will be capped at 36.5-37.5% when the thickness of thelayer is 12 nm. A thickness of more than 12 nm will not increaseabsorption further.

FIG. 15 includes a graph which illustrates a profile of absorptionpercentage as a function of wavelength for a single layer of chromiumhaving a thickness of 16.85 nm. FIG. 16 includes a graph whichillustrates a profile of absorption percentage as a function ofwavelength for a single layer of nickel having a thickness of 11.85 nm.Referring to FIGS. 15 and 16, it is apparent that the absorption profileof chromium is more even throughout the spectral range than that ofnickel. Also, it is readily observed that the absorption performancesare not as good as that of the sandwich composite structures, althoughthe metal layers are considerably thinner.

In accordance with exemplary embodiments, in addition to the sandwichcomposite structures and the single-metal-layer structures, the IRabsorption layer can also be formed to have other structures. Forexample, in some exemplary embodiments, some sandwich type composite IRabsorption layers do not use metal-dielectric-metal arrangements.Examples of these include SiO₂—Cr₂O₃—SiO₂, SiO₂—TaN—SiO₂,Cr—CrO_(x)—CrO_(x)N_(y), etc. Also, according to some exemplaryembodiments, there are two-sub-layer type composite IR absorptionlayers, instead of the three-sub-layer type composite IR absorptionlayers described above. Examples of these two-sub-layer type compositeIR absorption layers include Si₃N₄—TaN, SiC—SiO₂, etc. Also, accordingto some exemplary embodiments, some single-layer non-composite IRabsorption layers do not use metals. Examples of these include Cr₂O₃,CrSiO, Ni_(x)O_(y), carbon black, black inorganic materials, etc.

According to the exemplary embodiments described herein thus far, an IRabsorption layer or an IR reflection layer is included in the structureof an image sensor. According to other exemplary embodiments, anisolation layer is disposed over the RDL as in the previously describedexemplary embodiments. However, in the present exemplary embodiments,the material of which the isolation layer is formed is chosen such thatit significantly absorbs IR light. Therefore, the isolation layer ismulti-functional, and the need for separate isolation layers andabsorption layers is eliminated.

FIG. 17 includes a schematic cross-sectional diagram of an image sensor600 having a multi-functional isolation layer 650, which significantlyabsorbs IR light, according to some exemplary embodiments. Referring toFIG. 17, various elements of image sensor 600 are the same ascorresponding elements of the various image sensors described above indetail. These like elements are identified by like reference numerals.Detailed description of these like elements will not be repeated.

Referring to FIG. 17, an image sensor 600 includes an isolation layer650 formed over an RDL 620, which is formed over a passivation layer622. Isolation layer 650 is composed of a material that significantlyabsorbs IR. As a result, IR light passing through window or opening 26into sensing layer 612 is detected and used in generating an image.However, any IR light that reaches isolation layer 650 is absorbed byisolation layer 650, such that no IR light passes back through sensinglayer 612. As a result, no ghost image is produced. As an isolationlayer, layer 650 provides an electric charge insulating function. As anIR absorption layer, layer 650 significantly absorbs IR to reduce orprevent ghost imaging of RDL 620.

In some exemplary embodiments, image sensor 600 also includes a BPRlayer or film 640 applied to the front or top side of image sensor 600.In this embodiment, IR light 31 incident on the top or front surface ofimage sensor 600 in the non-active region of the device is blocked,i.e., absorbed, such that it does not enter sensing layer 612 and,therefore, does not introduce noise or degrade the image generated byimage sensor 600. In image sensor 600 of FIG. 12, BPR layer or film 640must remain open at window 26 such that IR light 28 can enter sensinglayer 612 and be detected. It will be understood that, within the scopeof this disclosure, image sensor 600 can include a BPR layer or film oneither its back/bottom side, its front/top side, both its back/bottomside and its front/top side, or neither its back/bottom nor itsfront/top side.

In some exemplary embodiments, isolation layer 650 can include anorganic material, such as a NIR absorbing organic compound. Thisisolation layer material is generally organic instead of inorganic. Theadvantage of a multi-functional isolation layer is that it can have asimple one-layer structure, as contrasted with other embodimentsdescribed herein that can comprise at least two layers. Therefore, theoverall sensor structure of FIG. 17 can be simpler and is easier tomanufacture.

In general, such NIR absorbing organic compounds are chromophores whoseπ electrons are effectively delocalized along a conjugated chain.Examples include polyene chromophores such as rylene and itsderivatives, polymethine chromophores such as merocyanine, cyanie andhemicyanine dyes, and NIR organic compounds containing donor-acceptor(D-A) chromophores such astetrathiafulvalene-σ-tetracyano-p-quinodimethane, a D-σ-A compound, andits derivatives. Other examples of D-A chromophores include D-π-A-π-Dtype, D-A-D type systems of compounds, etc. Yet other examples of NIRabsorption material are compounds that are disclosed in Near-InfraredOrganic Compounds and Emerging Applications, Gang Qian and Zhi YuanWang; Chem. Asian. J. 2000, 5, 1006-1029, as well as U.S. Pat. No.6,775,059, which are incorporated herein in their entirety by reference.

FIGS. 18A-18C are images which illustrate the results of the approachesof the exemplary embodiments used in reducing or eliminating ghostimaging, specifically ghost imaging of the RDL of an image sensor. Theapproaches include forming an IR reflection barrier layer between theRDL and the sensing layer and forming an IR absorption barrier layerbetween the RDL and the sensing layer. FIG. 18A is an image producedwithout any IR barrier layer. As shown in FIG. 18A, a ghost image of theRDL, showing its conductive traces and pads, is formed. FIG. 18B is animage illustrating the effects of adding an IR reflection barrier layerbetween the RDL and the sensing layer, such as the embodimentsillustrated and described above in connection with FIGS. 5 and 6. Asshown in FIG. 18B, the image of the RDL is eliminated. However, thisapproach may cause the sensing layer to be flooded by the reflected IR.FIG. 18C is an image illustrating the effects of adding an IR absorptionbarrier layer between the RDL and the sensing layer, such as theembodiments illustrated and described above in connection with FIGS. 11,12 and 17. As shown in FIG. 18C, the image of the RDL is eliminated.Also, by comparison with FIG. 18B, it is noted that the flooding of thesensing layer is eliminated when using an IR absorption barrier layer,as evidenced by the relative darkness of the image of FIG. 18C.

Generally, the IR reflection layer tends to result in more IR reachingthe sensing layer than the IR absorption layer. In a relatively stronglighting environment, the IR reflection layer may cause the sensors tobe flooded by IR, thus possibly negatively impacting the detection ofother wavelengths, such as those in the visible range. However, in anenvironment that has very little visible light and relies heavily on IRfor detection, the IR reflection layer will have better detectionsensitivity than the IR absorption layer, because more IR will reach thesensing layer. An example of this may be a night vision product that isintended for use in a pitch black environment.

It should be noted that in an environment where both visible and IR areimportant for detection, the IR absorption layer may be a betterapproach, because the sensor will not be flooded by IR as with the IRreflection layer. It should also be noted that, according to exemplaryembodiments, both the IR reflection and the IR absorption may beimplemented within the same sensor product, to better prevent IR fromreaching the RDL.

While the present inventive concept has been particularly shown anddescribed with reference to exemplary embodiments thereof, it will beunderstood by those of ordinary skill in the art that various changes inform and details may be made therein without departing from the spiritand scope of the present inventive concept as defined by the followingclaims.

We claim:
 1. An image sensor, comprising: a photo sensing element forreceiving infrared (IR) radiation and detecting the IR radiation andgenerating an electrical signal indicative of the IR radiation; aredistribution layer (RDL) under the photo sensing element, the RDLcomprising a pattern of conductors for receiving the electrical signal;and an IR reflection layer between the photo sensing element and theRDL, said IR reflection layer reflecting a reflected portion of the IRradiation back to the photo sensing element such that the reflectedportion of the IR radiation does not impinge upon the RDL.
 2. The imagesensor of claim 1, wherein the IR reflection layer comprises multiplelayers of different transparent materials.
 3. The mage sensor of claim2, wherein the IR reflection layer comprises multiple alternating layersof two different materials.
 4. The image sensor of claim 3, wherein thetwo different materials comprise at least one of TiO₂ and SiO₂
 5. Theimage sensor of claim 2, wherein the multiple layers of differenttransparent materials have different refractive indices.
 6. The imagesensor of claim 2, wherein the multiple layers of different transparentmaterials have different thicknesses.
 7. The image sensor of claim 1,wherein the IR reflection layer comprises a layer of metal.
 8. The imagesensor of claim 7, wherein the layer of metal comprises one of aluminum,chromium, gold, silver and copper.
 9. The image sensor of claim 1,further comprising a layer of black photoresist over the photosensingelement for absorbing radiation.
 10. The image sensor of claim 11,wherein the layer of black photoresist covers a non-active region of thephotosensing layer.
 11. The image sensor of claim 1, further comprisinga layer of black photoresist under the photo sensing element forabsorbing radiation.
 12. The image sensor of claim 1, wherein the IRradiation is in a near infrared (NIR) wavelength range of 900-1200 nm.13. An image sensor, comprising: a photo sensing element for receivinginfrared (IR) radiation and detecting the IR radiation and generating anelectrical signal indicative of the IR radiation; a redistribution layer(RDL) under the photo sensing element, the RDL comprising a pattern ofconductors for receiving the electrical signal; and an IR absorptionlayer between the photosensing element and the RDL, said IR absorptionlayer absorbing the IR radiation such that a substantial portion of theIR radiation does not impinge upon the RDL.
 14. The image sensor ofclaim 13, wherein the IR absorption layer comprises multiple layers ofdifferent materials.
 15. The image sensor of claim 13, wherein the IRabsorption layer comprises multiple layers of materials in a compositemetal-dielectric-metal sandwich structure comprising a dielectric layerbetween first and second metal layers.
 16. The image sensor of claim 15,wherein the first and second metal layers have different thicknesses.17. The image sensor of claim 15, wherein the IR radiation penetratesthe first metal layer and forms a standing wave in resonance between thefirst metal layer and the second metal layer.
 18. The image sensor ofclaim 15, wherein parameters of the metal layers and dielectric layerare selected such that, when the IR radiation penetrates the first metallayer, the IR radiation forms a standing wave in resonance between thefirst metal layer and the second metal layer.
 19. The image sensor ofclaim 18, wherein the parameters selected include at least one of typeof material of the first metal layer, type of material of the secondmetal layer, type of material of the dielectric layer, thickness of thefirst metal layer, thickness of the second metal layer and thickness ofthe dielectric layer.
 20. The image sensor of claim 15, wherein at leastone of the first and second metal layers comprises at least one ofchromium and nickel.
 21. The image sensor of claim 15, wherein thedielectric layer comprises SiO₂.
 22. The image sensor of claim 13,wherein the IR absorption layer comprises a single metal layer.
 23. Theimage sensor of claim 22, wherein the single metal layer comprises atleast one of chromium and nickel.
 24. The image sensor of claim 13,wherein the IR absorption layer comprises a composite three-layerstructure.
 25. The image sensor of claim 24, wherein the compositethree-layer structure is at least one of a SiO₂—Cr₂O₃—SiO₂ three-layerstructure, a SiO₂—TaN—SiO₂ three-layer structure and aCr—CrO_(x)—CrO_(x)N_(y) three-layer structure.
 26. The image sensor ofclaim 13, wherein the IR absorption layer comprises a compositetwo-layer structure.
 27. The image sensor of claim 26, wherein thecomposite two-layer structure is at least one of a Si₃N₄—TaN two-layerstructure and a SiC—SiO₂ two-layer structure.
 28. The image sensor ofclaim 13, wherein the IR absorption layer comprises a singlenon-metallic layer.
 29. The image sensor of claim 28, wherein the singlenon-metallic layer comprises at least one of Cr₂O₃, CrSiO, Ni_(x)O_(y),carbon black, and black inorganic materials.
 30. The image sensor ofclaim 13, further comprising a layer of black photoresist over thephotosensing element for absorbing radiation.
 31. The image sensor ofclaim 30, wherein the layer of black photoresist covers a non-activeregion of the photosensing layer.
 32. The image sensor of claim 13,further comprising a layer of black photoresist under the photo sensingelement for absorbing radiation.
 33. The image sensor of claim 13,wherein the IR radiation is in a near infrared (NIR) wavelength range of900-1200 nm.
 34. An image sensor, comprising: a photo sensing elementfor receiving infrared (IR) radiation and detecting the IR radiation andgenerating an electrical signal indicative of the IR radiation; aredistribution layer (RDL) under the photo sensing element, the RDLcomprising a pattern of conductors for receiving the electrical signal;and an isolation layer between the photosensing element and the RDL, theisolation layer being adapted to absorb the IR radiation such that asubstantial portion of the IR radiation does not impinge upon the RDL.35. The image sensor of claim 34, wherein the isolation layer is adaptedto provide electrical isolation among the conductors of the RDL.
 36. Theimage sensor of claim 34, wherein the isolation layer comprises anorganic material.
 37. The image sensor of claim 34, wherein theisolation layer comprises an IR-absorbing organic compound.
 38. Theimage sensor of claim 37, wherein the IR-absorbing organic compound is achromophore whose π electrons are effectively delocalized along aconjugated chain.
 39. The image sensor of claim 37, wherein theIR-absorbing organic compound is at least one of a polyene chromophores,a polymethine chromophore, and a NIR organic compound containingdonor-acceptor (D-A) chromophores.
 40. The image sensor of claim 39,wherein the polyene chromophore is one of rylene and its derivatives.41. The image sensor of claim 39, wherein the polymethine chromophore isone of merocyanine, cyanie and hemicyanine dyes.
 42. The image sensor ofclaim 39, wherein the NIR organic compound containing donor-acceptor(D-A) chromophores is at least one oftetrathiafulvalene-σ-tetracyano-p-quinodimethane, a D-σ-A compound, andits derivatives, and D-π-A-π-D type and D-A-D type systems of compounds.43. The image sensor of claim 34, further comprising a layer of blackphotoresist over the photosensing element for absorbing radiation. 44.The image sensor of claim 43, wherein the layer of black photoresistcovers a non-active region of the photosensing layer.
 45. The imagesensor of claim 34, further comprising a layer of black photoresistunder the photosensing element for absorbing radiation.
 46. The imagesensor of claim 34, wherein the IR radiation is in a near infrared (NIR)wavelength range of 900-1200 nm.